| 摘要 |
Provided is an epitaxial substrate for a semiconductor device, which has excellent schottky contact characteristics that are stable over time. The epitaxial substrate for a semiconductor device includes a base substrate, a channel layer formed of a first group III nitride containing at least Ga and having a composition of In x1 Al y1 Ga z1 N (x1+y1+z1=1), and a barrier layer formed of a second group III nitride containing at least In and Al and having a composition of In x2 Al y2 Ga z2 N (x2+y2+z2=1), wherein the barrier layer has tensile strains in an in-plane direction, and pits are formed on a surface of the barrier layer at a surface density of 5 × 10 7 /cm 2 or more and 1 × 10 9 /cm 2 or less. |
