Reduced short channel effect of III-V field effect transistor via oxidizing aluminum-rich underlayer

摘要

In one embodiment, a method of forming a semiconductor device is provided that may include forming a semiconductor device including a gate structure on a channel portion of III-V semiconductor substrate. The III-V semiconductor substrate including a III-V base substrate layer, an aluminum containing III-V semiconductor layer that is present on the III-V base substrate layer, and a III-V channel layer. Oxidizing a portion of the aluminum containing III-V semiconductor layer on opposing sides of the gate structure. Forming a raised source region and a raised drain region over the portion of the aluminum containing III-V semiconductor layer that has been oxidized. Forming interconnects to the raised source region and the raised drain region.

主权项

1. A semiconductor device comprising:
a III-V base semiconductor layer; a III-V ground plane layer present on the III-V base semiconductor layer; an island of undoped III-V aluminum containing semiconductor layer that is present on the III-V ground plane layer; aluminum containing oxide regions on opposing sides of the island of the undoped III-V aluminum containing semiconductor layer; a III-V channel layer that is present on the island of the undoped III-V aluminum containing semiconductor layer; a raised III-V source region and a raised III-V drain region are present on the aluminum containing oxide regions and positioned on opposing sides of the III-V channel layer; and a gate structure on the III-V channel layer.