| 摘要 |
PROBLEM TO BE SOLVED: To enhance the in-plane uniformity of etching rate.SOLUTION: An etching method for plasma etching a workpiece by gas supplied includes: a measurement step for adjusting the temperature of a focus ring by means of a first temperature control mechanism capable of controlling independently from the temperature control of a workpiece, and measuring the time variation until the temperature of the focus ring reaches a target value; an estimation step for estimating the degree of consumption of the focus ring from the time variation thus measured, on the basis of the correlation of a preset time variation and the degree of consumption of the focus ring; and a correction step for correcting the target value of temperature of the focus ring, on the basis of the degree of consumption of the focus ring thus estimated. |
