| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a SiC single crystal, capable of efficiently reducing both of edge dislocation and basal surface dislocation, and a SiC single crystal obtained by the method.SOLUTION: The method for manufacturing a SiC single crystal comprises a repetitive c plane growth step of repeating n times (n≥2) steps of (a) seed crystal cutting where a seed crystal for c plane growth, having 1° or more and 30°or less of the offset angle of a growth surface, is cut from a single crystal and (b) c plane growth where a new single crystal is c-plane grown on the growth surface. The growth surface of the seed crystal has an offset direction changed in a {0001} plane at least once in the n repetitions. A maximum angle difference in the offset direction of the growth surface of the seed crystal is 120° or less. |
