发明名称 |
QUANTUM CASCADE LASER |
摘要 |
A quantum cascade laser includes a semiconductor substrate including a principal surface; a mesa waveguide disposed on the principal surface of the semiconductor substrate, the mesa waveguide including a light emitting region and an upper cladding layer disposed on the light emitting region, the mesa waveguide extending in a direction orthogonal to a reference direction; and a current blocking layer formed on a side surface of the mesa waveguide. The light emitting region includes a plurality of core regions and a plurality of buried regions. The core regions and the buried regions are alternately arranged in the reference direction. The core region at a central portion of the mesa waveguide has a width larger than a width of the core region at a peripheral portion of the mesa waveguide in the reference direction. |
申请公布号 |
US2014355637(A1) |
申请公布日期 |
2014.12.04 |
申请号 |
US201414292250 |
申请日期 |
2014.05.30 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
HASHIMOTO Jun-ichi;MURATA Michio |
分类号 |
H01S5/34;H01S5/343 |
主分类号 |
H01S5/34 |
代理机构 |
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代理人 |
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主权项 |
1. A quantum cascade laser comprising:
a semiconductor substrate including a principal surface; a mesa waveguide disposed on the principal surface of the semiconductor substrate, the mesa waveguide including a light emitting region and an upper cladding layer disposed on the light emitting region, the mesa waveguide extending in a direction orthogonal to a reference direction; and a current blocking layer formed on a side surface of the mesa waveguide, wherein the light emitting region includes a plurality of core regions and a plurality of buried regions, the core regions and the buried regions are alternately arranged in the reference direction, and the core region at a central portion of the mesa waveguide has a width larger than a width of the core region at a peripheral portion of the mesa waveguide in the reference direction. |
地址 |
Osaka JP |