| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which has a simple structure, and can reduce a negative capacitance at a time of switching while keeping a low on-voltage.SOLUTION: A base layer 7 formed on a surface side of a semiconductor substrate 3 is divided into multiple regions by trenches 20. The divided regions are constituted by a channel region 7a that is connected to an emitter electrode 17 through an emitter region 13, and a floating region 7b that is not connected to the emitter electrode 17. In the floating region 7b, an N-type N+ layer 25 is formed along another side wall surface 20b of the trench 20, and one end 25a of the N+ layer 25 is provided so as to reach at least a position closer to a bottom 20c of the trench 20. |
