发明名称 |
SEMICONDUCTOR MEMORY DEVICE AND DRIVING METHOD THEREOF |
摘要 |
A semiconductor device which stores data by using a transistor whose leakage current between source and drain in an off state is small as a writing transistor. In a matrix including a plurality of memory cells in which a drain of the writing transistor is connected to a gate of a reading transistor and the drain of the writing transistor is connected to one electrode of a capacitor, a gate of the writing transistor is connected to a writing word line; a source of the writing transistor is connected to a writing bit line; and a source and a drain of the reading transistor are connected to a reading bit line and a bias line. In order to reduce the number of wirings, the writing bit line or the bias line is substituted for the reading bit line in another column. |
申请公布号 |
US2014355333(A1) |
申请公布日期 |
2014.12.04 |
申请号 |
US201414460399 |
申请日期 |
2014.08.15 |
申请人 |
Semiconductor Energy Laboratory Co., Ltd. |
发明人 |
Yamazaki Shunpei;Takemura Yasuhiko |
分类号 |
G11C11/4096 |
主分类号 |
G11C11/4096 |
代理机构 |
|
代理人 |
|
主权项 |
1. (canceled) |
地址 |
Atsugi-shi JP |