METHODS FOR FABRICATING SEMICONDUCTOR DEVICES

摘要

A semiconductor device can include a first substrate and conductive patterns on the first substrate, where the conductive patterns are disposed in stacks vertically extending from the substrate. An active pillar can be on the first substrate vertically extend from the first substrate throughthe conductive patterns to provide vertical string transistors on the first substrate. A second substrate can be on the conductive patterns and the active pillar opposite the first substrate. A peripheral circuit transistor can be on the second substrate opposite the first substrate, where the peripheral circuit transistor can be adjacent to and overlap an uppermost pattern of the conductive patterns.

主权项

1. A method for fabricating a semiconductor device, comprising:
preparing a first substrate comprising conductive patterns and an active pillar, the conductive patterns disposed in a vertical stack including interposing insulating patterns between each of the conductive patterns, the active pillar vertically extending through the conductive patterns; forming a first interlayer insulating layer which covers the first substrate having the conductive patterns and the active pillar; and forming a second substrate on the first interlayer insulating layer, the second substrate including a peripheral circuit transistor adjacent to and overlapping an uppermost conductive pattern.