Semiconductor Structures and Methods with High Mobility and High Energy Bandgap Materials

摘要

An embodiment is a structure comprising a substrate, a high energy bandgap material, and a high carrier mobility material. The substrate comprises a first isolation region and a second isolation region. Each of first and second isolation regions extends below a first surface of the substrate between the first and second isolation regions. The high energy bandgap material is over the first surface of the substrate and is disposed between the first and second isolation regions. The high carrier mobility material is over the high energy bandgap material. The high carrier mobility material extends higher than respective top surfaces of the first and second isolation regions to form a fin.

主权项

1. A method comprising:
epitaxially growing a first semiconductor material on a semiconductor substrate, the epitaxially growing the first semiconductor material forming facets on the first semiconductor material, the first semiconductor material having a bandgap energy greater than 1 eV, the semiconductor substrate including a first isolation region and a second isolation region extending to a depth below a first surface of the semiconductor substrate, the first surface being between the first isolation region and the second isolation region, the first isolation region and the second isolation region extending higher than the first surface of the semiconductor substrate; forming a fin extending higher than the first isolation region and the second isolation region, the forming the fin including epitaxially growing a second semiconductor material on the facets of the first semiconductor material, the second semiconductor material having a hole mobility greater than 1,500 cm2/V-s or an electron mobility greater than 8,500 cm2/V-s; and forming a gate structure over the fin.