发明名称 FLASH MEMORY SYSTEM AND WORD LINE INTERLEAVING METHOD THEREOF
摘要 Provided are a flash memory system and a word line interleaving method thereof. The flash memory system includes a memory cell array, and a word line interleaving logic. The memory cell array is connected to a plurality of word lines. The word line (WL) interleaving logic performs an interleaving operation on WL data corresponding to at least two different wordlines and programming data, including the interleaved data, to the memory cell array.
申请公布号 US2014355348(A1) 申请公布日期 2014.12.04
申请号 US201414459736 申请日期 2014.08.14
申请人 KIM Yongjune;SON Hong Rak;CHOI Seonghyeog;KONG Junjin 发明人 KIM Yongjune;SON Hong Rak;CHOI Seonghyeog;KONG Junjin
分类号 G11C16/10;G11C16/04 主分类号 G11C16/10
代理机构 代理人
主权项
地址 Seoul KR