发明名称 |
Semiconductor device with first and second field-effect structures and an integrated circuit including the semiconductor device |
摘要 |
A semiconductor device includes a source metallization and a semiconductor body. The semiconductor body includes a first field-effect structure including a source region of a first conductivity type electrically coupled to the source metallization and a second field-effect structure including a source region of the first conductivity type electrically coupled to the source metallization. A first gate electrode of the first field-effect structure is electrically coupled to a first gate driver circuit and a second gate electrode of the second field-effect structure is electrically coupled to a second gate driver circuit different from the first gate driver circuit. The first field-effect structure and the second field-effect structure share a common drain. |
申请公布号 |
US8901661(B2) |
申请公布日期 |
2014.12.02 |
申请号 |
US201313911484 |
申请日期 |
2013.06.06 |
申请人 |
Infineon Technologies Austria AG |
发明人 |
Mauder Anton;Hirler Franz;Weyers Joachim |
分类号 |
H01L21/70;H01L29/78;H01L27/088;H01L29/06;H01L29/10;H01L29/417 |
主分类号 |
H01L21/70 |
代理机构 |
Murphy, Bilak & Homiller, PLLC |
代理人 |
Murphy, Bilak & Homiller, PLLC |
主权项 |
1. A semiconductor device, comprising:
a source metallization; a semiconductor body including:
a first field-effect structure including a source region of a first conductivity type electrically coupled to the source metallization; anda second field-effect structure including a source region of the first conductivity type electrically coupled to the source metallization; and wherein a first gate electrode of the first field-effect structure is electrically coupled to a first gate driver circuit and a second gate electrode of the second field-effect structure is electrically coupled to a second gate driver circuit different from the first gate driver circuit; and wherein the first field-effect structure and the second field-effect structure share a common drain, wherein the first gate driver circuit is configured to drive the first gate electrode with a signal configured to turn the first field-effect structure on when a body diode of the first field-effect structure is in a conducting mode and to turn the first field-effect structure off when the body diode of the first field-effect structure is in a non-conducting mode. |
地址 |
Villach AT |