发明名称 Method for making epitaxial structure
摘要 A method for making epitaxial structure is provided. The method includes providing a substrate having an epitaxial growth surface, placing a graphene layer on the epitaxial growth surface, and epitaxially growing an epitaxial layer on the epitaxial growth surface. The graphene layer includes a number of apertures to expose a part of the epitaxial growth surface. The epitaxial layer is grown from the exposed part of the epitaxial growth surface and through the aperture.
申请公布号 US8900977(B2) 申请公布日期 2014.12.02
申请号 US201213676026 申请日期 2012.11.13
申请人 Tsinghua University;Hon Hai Precision Industry Co., Ltd. 发明人 Wei Yang;Fan Shou-Shan
分类号 H01L21/20 主分类号 H01L21/20
代理机构 Novak Druce Connolly Bove + Quigg LLP 代理人 Novak Druce Connolly Bove + Quigg LLP
主权项 1. A method for making an epitaxial structure, the method comprising: providing a substrate having an epitaxial growth surface; making a graphene layer on the epitaxial growth surface and forming a plurality of apertures through the graphene layer to expose a part of the epitaxial growth surface to form an exposed part, wherein the making the graphene layer and forming the plurality of apertures comprises: making a graphene suspension with graphene powder dispersed therein;forming, a continuous graphene coating on the epitaxial growth surface of the substrate; andmaking a patterned titanium dioxide layer, wherein the making, the patterned titanium dioxide layer comprises depositing titanium on a patterned carbon nanotube structure to obtain a patterned metal titanium layer and oxidizing the patterned metal titanium layer;contacting the patterned titanium dioxide layer with the continuous graphene coating;irradiating the patterned titanium dioxide layer with ultraviolet light; andremoving the patterned titanium dioxide layer; and epitaxially growing an epitaxial layer from the exposed part of the epitaxial growth surface and through the plurality of apertures.
地址 Beijing CN