发明名称 |
Method for making epitaxial structure |
摘要 |
A method for making epitaxial structure is provided. The method includes providing a substrate having an epitaxial growth surface, placing a graphene layer on the epitaxial growth surface, and epitaxially growing an epitaxial layer on the epitaxial growth surface. The graphene layer includes a number of apertures to expose a part of the epitaxial growth surface. The epitaxial layer is grown from the exposed part of the epitaxial growth surface and through the aperture. |
申请公布号 |
US8900977(B2) |
申请公布日期 |
2014.12.02 |
申请号 |
US201213676026 |
申请日期 |
2012.11.13 |
申请人 |
Tsinghua University;Hon Hai Precision Industry Co., Ltd. |
发明人 |
Wei Yang;Fan Shou-Shan |
分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
Novak Druce Connolly Bove + Quigg LLP |
代理人 |
Novak Druce Connolly Bove + Quigg LLP |
主权项 |
1. A method for making an epitaxial structure, the method comprising:
providing a substrate having an epitaxial growth surface; making a graphene layer on the epitaxial growth surface and forming a plurality of apertures through the graphene layer to expose a part of the epitaxial growth surface to form an exposed part, wherein the making the graphene layer and forming the plurality of apertures comprises:
making a graphene suspension with graphene powder dispersed therein;forming, a continuous graphene coating on the epitaxial growth surface of the substrate; andmaking a patterned titanium dioxide layer, wherein the making, the patterned titanium dioxide layer comprises depositing titanium on a patterned carbon nanotube structure to obtain a patterned metal titanium layer and oxidizing the patterned metal titanium layer;contacting the patterned titanium dioxide layer with the continuous graphene coating;irradiating the patterned titanium dioxide layer with ultraviolet light; andremoving the patterned titanium dioxide layer; and epitaxially growing an epitaxial layer from the exposed part of the epitaxial growth surface and through the plurality of apertures. |
地址 |
Beijing CN |