| 主权项 |
1. A method for fabricating a solid state battery device comprising a plurality of battery cells arranged in a stack configuration using a continuous process, the method comprising:
providing a substrate having a surface region, the substrate having a flexible characteristic; transferring the substrate into a vacuum process; forming a bottom thin film barrier material overlying and directly contacting the surface region of the substrate, the bottom thin film barrier material configured to prevent ionic species from a first anode material to migrate to the substrate; forming a first current collector region overlying the bottom barrier material; forming a first cathode material overlying the first current collector region; forming a first electrolyte overlying the first cathode material; forming a second current collector region overlying the first anode material; causing a strain condition comprising a stress associated with any combination of the first collector region, the first cathode material, the first electrolyte, or the second current collector; whereupon the first current collector region, the first cathode material, the first electrolyte, and the second current collector region form a first electrochemical cell; forming an intermediary thin film barrier material overlying the second current collector region to compensate the strain condition causing a reduction in the stress associated with any combination of the first collector region, the first cathode material, first electrolyte, or the second current collector and prevent migration of an ionic species from either the first electrochemical cell to an overlying second electrochemical cell or the second electrochemical cell to the first electrochemical cell; forming a top thin film barrier material overlying the second electrochemical cell, the top thin barrier material being configured to prevent an oxygen, water, nitrogen, or carbon dioxide from diffusing into either the second electrochemical cell or the first electrochemical cell and covering an entirety of the first electrochemical cell and the second electrochemical cell while exposing a first contact portion of the first current collector region and a second contact portion of the second current collector region; continuously forming a plurality of electrochemical cells numbered from 3 to N, where N is an integer greater than 1000, configured between the second electrochemical cell and the top thin film barrier material; and whereupon forming the bottom thin film barrier material, forming the first current collector region, forming the first cathode material, forming the first electrolyte, forming the second current collector region overlying the first anode material, causing a strain condition, forming the intermediary thin film barrier material, forming the top thin film barrier material, and forming the plurality of electrochemical cells numbered from 3 to N, where N is an integer greater than 1000, configured between the second electrochemical cell and the top thin film barrier material are maintained under the vacuum process; wherein the reduction of stress is one third of a value of stress of any combination of the first collector region, the first cathode material, first electrolyte, or the second current collector without the intermediary thin film barrier material. |
