| 摘要 |
<p>A TUNNELING MAGNETO-RESISTIVE READER (10) INCLUDES A SENSOR STACK (12) SEPARATING A TOP MAGNETIC SHIELD (14) FROM A BOTTOM MAGNETIC SHIELD (24). THE SENSOR STACK (12) INCLUDES A REFERENCE MAGNETIC ELEMENT (34) HAVING A REFERENCE MAGNETIZATION ORIENTATION DIRECTION AND A FREE MAGNETIC ELEMENT (30) HAVING A FREE MAGNETIZATION ORIENTATION DIRECTION SUBSTANTIALLY PERPENDICULAR TO THE REFERENCE MAGNETIZATION ORIENTATION DIRECTION. A NON-MAGNETIC SPACER LAYER (32) SEPARATES THE REFERENCE MAGNETIC ELEMENT (34) FROM THE FREE MAGNETIC ELEMENT (30). A FIRST SIDE MAGNETIC SHIELD (18) AND A SECOND SIDE MAGNETIC SHIELD (20) IS DISPOSED BETWEEN THE TOP MAGNETIC SHIELD (14) FROM A BOTTOM MAGNETIC SHIELD (24), AND THE SENSOR STACK (12) IS BETWEEN THE FIRST SIDE MAGNETIC SHIELD (18) AND THE SECOND SIDE MAGNETIC SHIELD (20). THE FIRST SIDE MAGNETIC SHIELD (18) AND THE SECOND SIDE MAGNETIC SHIELD (20) ELECTRICALLY INSULATES THE TOP MAGNETIC SHIELD (14) FROM A BOTTOM MAGNETIC SHIELD (24).</p> |
