Integrated Circuit Having Raised Source Drains Devices with Reduced Silicide Contact Resistance and Methods to Fabricate Same

摘要

A structure has at least one field effect transistor having a gate stack disposed between raised source drain structures that are adjacent to the gate stack. The gate stack and raised source drain structures are disposed on a surface of a semiconductor material. The structure further includes a layer of field dielectric overlying the gate stack and raised source drain structures and first contact metal and second contact metal extending through the layer of field dielectric. The first contact metal terminates in a first trench formed through a top surface of a first raised source drain structure, and the second contact metal terminates in a second trench formed through a top surface of a second raised source drain structure. Each trench has silicide formed on sidewalls and a bottom surface of at least a portion of the trench. Methods to fabricate the structure are also disclosed.

主权项

1. A method to fabricate a transistor device, comprising:
depositing raised source drain structures adjacent to a gate stack disposed on a surface of a semiconductor material; depositing metal on a top surface of each raised source drain structure and over a top surface of the gate conductor; siliciding the deposited metal; depositing a layer of field dielectric over the gate stack and the raised source drain structures; opening apertures through the layer of field dielectric at contact locations, the apertures extending to the silicided metal at the top of each raised source drain structure; forming a trench through the silicided metal at the top of each raised source drain structure, each trench extending at least partially into the raised source drain structure; depositing metal to cover sidewalls and a bottom of at least a portion of each trench; siliciding the deposited metal covering the sidewalls and the bottom of each trench; and depositing contact metal into the apertures to be in electrically conductive contact with the silicided metal at the bottom of each trench and the silicided trench sidewalls.