METHOD OF GROWING &bgr;-Ga2O3-BASED SINGLE CRYSTAL, &bgr;-Ga2O3-BASED SINGLE CRYSTAL SUBSTRATE AND PRODUCTION METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a method of growing a &bgr;-GaO-based single crystal which is used to grow a planar &bgr;-GaO-based single crystal, with shoulder expansion in the width direction suppressed, and provides a wide &bgr;-GaO-based seed single crystal, a &bgr;-GaO-based single crystal substrate using the method and a production method of the substrate.SOLUTION: A method of growing a &bgr;-GaO-based single crystal by an EFG method includes causing a GaO-based molten liquid 12 in a crucible 13 to rise to an opening 14b of a die 14 through a slit 14a of the die 14 and bringing a seed crystal 20 into contact with the GaO-based molten liquid 12 present in the opening 14b of the die 14 in a state where the horizontal position of the seed crystal 20 is deviated in the width direction W from the center in the width direction W, and pulling up the seed crystal 20 brought into contact with the GaO-based molten liquid 12 to grow a &bgr;-GaO-based single crystal 25.