| 发明名称 |
Semiconductor Layer Including Compositional Inhomogeneities |
| 摘要 |
A device comprising a semiconductor layer including a plurality of compositional inhomogeneous regions is provided. The difference between an average band gap for the plurality of compositional inhomogeneous regions and an average band gap for a remaining portion of the semiconductor layer can be at least thermal energy. Additionally, a characteristic size of the plurality of compositional inhomogeneous regions can be smaller than an inverse of a dislocation density for the semiconductor layer. |
| 申请公布号 |
US2014346441(A1) |
申请公布日期 |
2014.11.27 |
| 申请号 |
US201414285738 |
申请日期 |
2014.05.23 |
| 申请人 |
Sensor Electronic Technology, Inc. |
发明人 |
Shur Michael;Jain Rakesh;Shatalov Maxim S.;Dobrinsky Alexander;Yang Jinwei;Gaska Remigijus |
| 分类号 |
H01L33/06;H01L33/00 |
主分类号 |
H01L33/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A device comprising:
a semiconductor layer comprising a plurality of compositional inhomogeneous regions, wherein a difference between an average band gap for the plurality of compositional inhomogeneous regions and an average band gap for a remaining portion of the semiconductor layer is at least thermal energy, and wherein a characteristic size of the plurality of compositional inhomogeneous regions is smaller than an inverse of a dislocation density for the semiconductor layer. |
| 地址 |
Columbia SC US |
