MULTIJUNCTION PHOTOVOLTAIC DEVICE HAVING SIGE(SN) AND GAASNSB CELLS

摘要

A multijunction tandem photovoltaic device is disclosed having a bottom subcell of silicon germanium or silicon germanium tin material and above that a subcell of gallium nitride arsenide antimonide material. The materials are lattice matched to gallium arsenide, which preferably forms the substrate. Preferably, further lattice matched subcells of gallium arsenide, indium gallium phosphide and aluminium gallium arsenide or aluminium indium gallium phosphide are provided.

主权项

1. A multijunction photovoltaic device comprising: a set of semiconductor material layers, the layers including:
a first light absorbing layer of silicon germanium or silicon germanium tin material including a photocarrier separating p-n junction, a second light absorbing layer of gallium nitride arsenide antimonide material including a photocarrier separating p-n junction, wherein the silicon germanium or silicon germanium tin layer and the gallium nitride arsenide antimonide layer are lattice matched to gallium arsenide.