| 摘要 |
The present invention is a method for manufacturing a silicon single crystal by a HMCZ method, wherein a gas rectifier tube is disposed in a main chamber and a heat shielding member is disposed on a silicon melt surface side of the gas rectifier tube and wherein the silicon single crystal is manufactured while controlling a gas flow velocity v (m/s) and a crystal rotation R (rpm) such that the flow velocity v of gas that passes a cross-sectional area S and the crystal rotation R of the silicon single crystal to be pulled satisfy the relationship v≤-0.12R+1.52, the cross-sectional area S being composed of a lowermost end of an innermost diameter portion of the heat shielding member and a portion which is in a vertical position from the lowermost end in the silicon melt surface. Thus, by the HMCZ method, a method for manufacturing a silicon single crystal with a low oxygen concentration in which oxygen concentration is stable in a growth axis direction of the crystal is provided. |
