| 发明名称 |
THIN FILM TRANSISTOR, DISPLAY APPARATUS INCLUDING THE THIN FILM TRANSISTOR, AND METHOD OF MANUFACTURING THE THIN FILM TRANSISTOR |
| 摘要 |
A thin film transistor includes: a substrate, a semiconductor layer disposed on the substrate, a first gate electrode and a second gate electrode disposed on the semiconductor layer, a gate insulating layer disposed between the semiconductor layer and the first and second gate electrodes and having a first through hole between the first and second gate electrodes and a capping layer covering the first gate electrode and contacting the semiconductor layer via the first through hole. The capping layer includes a conductive material. |
| 申请公布号 |
US2014346604(A1) |
申请公布日期 |
2014.11.27 |
| 申请号 |
US201314050825 |
申请日期 |
2013.10.10 |
| 申请人 |
SAMSUNG DISPLAY CO., LTD. |
发明人 |
LEE YUL-KYU;CHO KYU-SIK;PARK SUN |
| 分类号 |
H01L29/786;H01L29/66;H01L29/78 |
主分类号 |
H01L29/786 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A thin film transistor comprising:
a substrate; a semiconductor layer disposed on the substrate; a first gate electrode and a second gate electrode disposed on the semiconductor layer; a gate insulating layer disposed between the semiconductor layer and the first and second gate electrodes and having a first through hole between the first and second gate electrodes; and a capping layer covering the first gate electrode and contacting the semiconductor layer via the first through hole, wherein the capping layer includes a conductive material. |
| 地址 |
Yongin-City KR |
