发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 This semiconductor integrated circuit device includes: first and second regions, which respectively operate by means of voltages different from each other; and a signal wiring line that supplies signals from the first region to the second region. The second region includes: a circuit, which is connected between a first wiring line to which a voltage is selectively supplied, and a third terminal to which a voltage is supplied, and which operates by means of a difference voltage between the voltage of the first wiring line and the voltage supplied to the third terminal; and a discharge circuit that discharges charges of the first wiring line. An increase of a potential difference between the signal wiring line and the first wiring line is suppressed by means of the discharge circuit, and breakage of the circuit included in the second region can be reduced.
申请公布号 WO2014188514(A1) 申请公布日期 2014.11.27
申请号 WO2013JP64089 申请日期 2013.05.21
申请人 RENESAS ELECTRONICS CORPORATION 发明人 NARITA, KOKI
分类号 H01L21/822;H01L27/04 主分类号 H01L21/822
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