Semiconductor device with an insulation layer having a varying thickness

摘要

A layer with a laterally varying thickness, a substrate with a first surface and an insulation layer formed on the first surface of the substrate is provided. A plurality of at least one of recesses and openings is formed in the insulation layer, wherein the plurality is arranged at a pitch. Each of the at least one of recesses and openings has a lateral width, wherein at least one of the pitch and the lateral width varies in a lateral direction. The plurality of the at least one of recesses and openings defines a given region in the insulation layer. The insulation layer having the plurality of the at least one of the recesses and openings is tempered at elevated temperatures so that the insulation layer at least partially diffluences to provide the insulation layer with a laterally varying thickness at least in the given region.

主权项

1. A method for manufacturing a layer with a laterally varying thickness, the method comprising:
providing a substrate with a first surface and an insulation layer formed on the first surface of the substrate; forming a plurality of at least one of recesses and openings in the insulation layer, the plurality of the at least one of recesses and openings arranged at a pitch (p), and each of the at least one of recesses and openings having a lateral width (w), wherein at least one of the pitch (p) and the lateral width (w) varies in a lateral direction, and wherein the plurality of the at least one of recesses and openings defines a given region in the insulation layer; and tempering the insulation layer comprising the plurality of the at least one of the recesses and openings at elevated temperatures so that the insulation layer at least partially diffluences to provide the insulation layer with a laterally varying thickness at least in the given region.