| 发明名称 |
Accoustic resonator having multiple lateral features |
| 摘要 |
A thin film bulk acoustic resonator (FBAR) includes a first electrode stacked on a substrate over a cavity, a piezoelectric layer stacked on the first electrode, and a second electrode stacked on the piezoelectric layer. Multiple lateral features are formed on a surface of the second electrode, the lateral features including multiple stepped structures. |
| 申请公布号 |
US8896395(B2) |
申请公布日期 |
2014.11.25 |
| 申请号 |
US201113232334 |
申请日期 |
2011.09.14 |
| 申请人 |
Avago Technologies General IP (Singapore) Pte. Ltd. |
发明人 |
Burak Dariusz;Nikkel Phil;Feng Chris |
| 分类号 |
H03H9/00;H03H9/13;H03H9/17;H03H9/02;H03H9/15 |
主分类号 |
H03H9/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A thin film bulk acoustic resonator (FBAR), comprising:
a first electrode on a substrate over a cavity; a piezoelectric layer on the first electrode; a second electrode on the piezoelectric layer; a plurality of lateral features on a surface of the second electrode, the plurality of lateral features comprising a plurality of stepped structures, having different widths, consecutively stacked on the second electrode. |
| 地址 |
SG |
