| 摘要 |
<p>The present technology includes a method for forming an interface passivation layer between a first semiconductor material (germanium, etc.) and a high-k gate dielectric. The technology uses hydrogen-based plasma formed by using a slotted-plane antenna plasma processing system. The plasma processing is performed at a temperature of less than 380°C, and even at a temperature of 200°C or less.</p> |
