| 摘要 |
A plasma etching device includes a processing container, a retainer which is provided in the processing container and retains a substrate, and an electrode plate which is provided in the container and faces the retainer. In addition, the plasma etching device includes a plurality of supply parts for supplying the space sandwiched between the retainer and the electrode plate with a processing gas from gas supplying holes which are equidistantly arranged in each area formed by radially and concentrically dividing the substrate into n segments(n is a natural number of two or more). In addition, the plasma etching device has a high-frequency power source for producing plasma from the processing gas supplied to the space from the plurality of supply parts by supplying high-frequency power to at least either the retainer or the electrode plate. The plasma etching device controls the flow rate of gas supplied from the gas supplying hole of each area. |
