FULLERENE DERIVATIVE AND N-TYPE SEMICONDUCTOR MATERIAL

摘要

The objective of the present invention is to provide a material having superior performance as an n-type semiconductor, particularly an n-type semiconductor for a photoelectric conversion element of an organic thin-film solar cell or the like. The present invention provides an n-type semiconductor material comprising a fullerene derivative represented by formula (1) (wherein: ring A represents a C60 fullerene; R1 represents a hydrogen atom, an alkyl group optionally having at least one substituent group, or an aryl group optionally having at least one substituent group; and Ar represents an aryl group optionally substituted with at least one alkyl group) and having a purity as defined below of at least 99%. The purity is defined as the formula, purity (%) = 100 - Dmax (%), where Dmax (%) is the largest among: the absolute value of the difference between the theoretical value and the analytical value from elemental analysis of carbon; the absolute value of the difference between the theoretical value and the analytical value from elemental analysis of hydrogen; and the absolute value of the difference between the theoretical value and the analytical value from elemental analysis of nitrogen.