发明名称 PLASMA PROCESSING APPARATUS
摘要 In a plasma processing apparatus for processing a substrate by plasmatizing a process gas introduced into a processing container, an introducing unit which introduces the process gas is formed on a ceiling surface of the processing container; a gas retention portion which gathers the process gas supplied from the outside of the processing container through a supply passage, and a plurality of gas ejection holes which allow communication between the gas retention portion and the inside of the processing container are formed in the introducing unit; a gas ejection hole is not formed in a location of the gas retention portion that faces an opening of the supply passage; and a cross section of each of the gas ejection holes has a flat shape.
申请公布号 US2014338602(A1) 申请公布日期 2014.11.20
申请号 US201414448003 申请日期 2014.07.31
申请人 TOKYO ELECTRON LIMITED 发明人 MIHARA Naoki;MATSUMOTO Naoki;YOSHIKAWA Jun;MURAKAMI Kazuo
分类号 C23C16/513 主分类号 C23C16/513
代理机构 代理人
主权项 1. A plasma processing apparatus which processes a substrate by plasmatizing a process gas introduced into a processing container, wherein an introducing unit which introduces the process gas is formed on a ceiling surface of the processing container; a gas retention portion which gathers the process gas supplied from the outside of the processing container through a supply passage, and an injector block which includes a plurality of gas ejection holes which allow communication between the gas retention portion and the inside of the processing container are provided in the introducing unit; and in a location, of the injector block, that faces an opening of the supply passage, a gas ejection hole is not formed and a recess portion accommodating the process gas supplied to the gas retention portion is formed.
地址 Tokyo JP