发明名称 |
PLASMA PROCESSING APPARATUS |
摘要 |
In a plasma processing apparatus for processing a substrate by plasmatizing a process gas introduced into a processing container, an introducing unit which introduces the process gas is formed on a ceiling surface of the processing container; a gas retention portion which gathers the process gas supplied from the outside of the processing container through a supply passage, and a plurality of gas ejection holes which allow communication between the gas retention portion and the inside of the processing container are formed in the introducing unit; a gas ejection hole is not formed in a location of the gas retention portion that faces an opening of the supply passage; and a cross section of each of the gas ejection holes has a flat shape. |
申请公布号 |
US2014338602(A1) |
申请公布日期 |
2014.11.20 |
申请号 |
US201414448003 |
申请日期 |
2014.07.31 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
MIHARA Naoki;MATSUMOTO Naoki;YOSHIKAWA Jun;MURAKAMI Kazuo |
分类号 |
C23C16/513 |
主分类号 |
C23C16/513 |
代理机构 |
|
代理人 |
|
主权项 |
1. A plasma processing apparatus which processes a substrate by plasmatizing a process gas introduced into a processing container,
wherein an introducing unit which introduces the process gas is formed on a ceiling surface of the processing container; a gas retention portion which gathers the process gas supplied from the outside of the processing container through a supply passage, and an injector block which includes a plurality of gas ejection holes which allow communication between the gas retention portion and the inside of the processing container are provided in the introducing unit; and in a location, of the injector block, that faces an opening of the supply passage, a gas ejection hole is not formed and a recess portion accommodating the process gas supplied to the gas retention portion is formed. |
地址 |
Tokyo JP |