| 摘要 |
<p>The present invention relates to a power MOSFET and, more particularly, to a power MOSFET with a new concave cell structure combining an existing planar structure with a trench structure and a manufacturing method thereof. The power MOSFET improves a thermal property by increasing a switching speed and an on-resistance with a high withstand voltage and is mass-produced without the increase of manufacturing costs by using an existing planar type manufacturing method.</p> |
