Nonvolatile memory elements with metal-deficient resistive-switching metal oxides

摘要

Nonvolatile memory elements are provided that have resistive switching metal oxides. The nonvolatile memory elements may be formed by depositing a metal-containing material on a silicon-containing material. The metal-containing material may be oxidized to form a resistive-switching metal oxide. The silicon in the silicon-containing material reacts with the metal in the metal-containing material when heat is applied. This forms a metal silicide lower electrode for the nonvolatile memory element. An upper electrode may be deposited on top of the metal oxide. Because the silicon in the silicon-containing layer reacts with some of the metal in the metal-containing layer, the resistive-switching metal oxide that is formed is metal deficient when compared to a stoichiometric metal oxide formed from the same metal.

主权项

1. A method of forming a nonvolatile memory element, comprising:
providing a silicon substrate; depositing a first layer comprising a metal on the silicon substrate; forming a metal oxide in at least a top portion of the first layer, forming a metal silicide in at least a bottom portion of the first layer; and depositing an electrode over the metal oxide.