Method for manufacturing semiconductor device, and semiconductor substrate

摘要

A method for manufacturing a semiconductor device includes forming at least one stripe-shaped protection film over a multilayer film in a scribe region of a semiconductor substrate having a plurality of semiconductor element regions formed therein, the protection film having a thickness larger in a center portion thereof than at an end surface thereof and being made of a member which transmits a laser beam, and removing the multilayer film in the scribe region by irradiating the protection film with a laser beam.

主权项

1. A semiconductor substrate comprising:
a plurality of semiconductor element regions; and at least one stripe-shaped protection film formed over a multilayer film in a scribe region, the protection film including a first portion which is located at a center of the protection film and a second portion which is located at an edge of the protection film, a thickness of the first portion being larger than a thickness of the second portion, the protection film being made of a member which transmits a laser beam, and an upper surface of the first portion being higher than an upper surface of the second portion from the semiconductor substrate.