发明名称 |
Stacked dynamic random access memory |
摘要 |
A memory includes at least one first substrate on which unit memory arrays are disposed as a matrix type, each unit memory array including unit memory cells disposed in an array, a second substrate stacked with the at least one first substrate, the second substrate including a sense amplifier region in which sense amplifiers configured to sense information stored in the unit memory cells are disposed, and a plurality of vertical conduction traces configured to electrically connect the at least one first substrate with the second substrate. The sense amplifier region is disposed in a memory region of the second substrate, wherein the memory region of the second substrate corresponds to the memory region of the first substrate. |
申请公布号 |
US8891275(B2) |
申请公布日期 |
2014.11.18 |
申请号 |
US201314062956 |
申请日期 |
2013.10.25 |
申请人 |
SNU R&DB Foundation |
发明人 |
Ahn Jin-Hong;Park Young-June |
分类号 |
G11C5/02;G11C5/06;G11C11/4097 |
主分类号 |
G11C5/02 |
代理机构 |
Sherr & Jiang, PLLC |
代理人 |
Sherr & Jiang, PLLC |
主权项 |
1. A memory comprising:
at least one first substrate on which unit memory arrays are disposed in a memory region as a matrix type, each unit memory array including unit memory cells disposed in an array; a second substrate stacked with the at least one first substrate, the second substrate including a sense amplifier region in which sense amplifiers configured to sense information stored in the unit memory cells are disposed; and a plurality of vertical conduction traces configured to electrically connect the at least one first substrate with the second substrate, wherein the sense amplifier region is disposed in a memory region of the second substrate, wherein the memory region of the second substrate corresponds to the memory region of the first substrate, wherein bit lines are connected to the sense amplifier through the vertical conduction traces. |
地址 |
Seoul KR |