| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of improving reliability, an electro-optic device, a semiconductor manufacturing method, an electro-optic device manufacturing method, and an electronic apparatus.SOLUTION: A gate electrode 30g is formed into a cylindrical shape having a first opening hole opened on a surface side of a first base material 10a, and a second opening hole opened on a side away from the first base material 10a, and is electrically connected to any of plural scanning lines 3c via a contact hole CNT1 of a first inter-layer insulation layer 11b arranged between the gate electrode 30g and the scanning line 3c. A semiconductor layer 30a is arranged in an opening hole of the gate electrode 30g via a gate insulation layer 11g, and a data line side source drain region 30s is arranged on the first opening hole side, and is electrically connected to a relay electrode 51. A pixel electrode side source drain region 30d is arranged on the second opening hole side. |
