发明名称 |
PROCESS OF MANUFACTURING SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR SUBSTRATE |
摘要 |
PROBLEM TO BE SOLVED: To provide a process of manufacturing a semiconductor substrate for producing a light-emitting device.SOLUTION: The process of manufacturing a semiconductor substrate for a light-emitting device includes: a laminated structure layer formation process of forming a laminated structure layer in which a first material layer and a second material layer having mutually different refractive indices are alternately laminated in a plurality on a surface of a support substrate of polycrystalline SiC; and a bonding process of bonding a single crystal layer of single crystal SiC on a surface of the laminated structure layer. |
申请公布号 |
JP2014216571(A) |
申请公布日期 |
2014.11.17 |
申请号 |
JP20130094649 |
申请日期 |
2013.04.26 |
申请人 |
TOYOTA INDUSTRIES CORP;SICOXS CORP |
发明人 |
IMAOKA ISAO;KOBAYASHI MOTOKI;UCHIDA EIJI;YAGI KUNIAKI;KAWAHARA TAKAMITSU;HATTA NAOKI;MINAMI AKIYUKI;SAKATA TOYOKAZU;MAKINO TOMOATSU |
分类号 |
H01L21/02;H01L21/20;H01L21/203;H01L33/32 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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