发明名称 PROCESS OF MANUFACTURING SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR SUBSTRATE
摘要 PROBLEM TO BE SOLVED: To provide a process of manufacturing a semiconductor substrate for producing a light-emitting device.SOLUTION: The process of manufacturing a semiconductor substrate for a light-emitting device includes: a laminated structure layer formation process of forming a laminated structure layer in which a first material layer and a second material layer having mutually different refractive indices are alternately laminated in a plurality on a surface of a support substrate of polycrystalline SiC; and a bonding process of bonding a single crystal layer of single crystal SiC on a surface of the laminated structure layer.
申请公布号 JP2014216571(A) 申请公布日期 2014.11.17
申请号 JP20130094649 申请日期 2013.04.26
申请人 TOYOTA INDUSTRIES CORP;SICOXS CORP 发明人 IMAOKA ISAO;KOBAYASHI MOTOKI;UCHIDA EIJI;YAGI KUNIAKI;KAWAHARA TAKAMITSU;HATTA NAOKI;MINAMI AKIYUKI;SAKATA TOYOKAZU;MAKINO TOMOATSU
分类号 H01L21/02;H01L21/20;H01L21/203;H01L33/32 主分类号 H01L21/02
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