| 发明名称 |
COMPLEX OXIDE SINTERED BODY, SPUTTERING TARGET, TRANSPARENT CONDUCTIVE OXIDE FILM, AND METHOD FOR PRODUCING SAME |
| 摘要 |
The present invention provides a complex oxide sintered body 10 wherein Zr/(In+Zr+Y) is 0.05 to 4.5 at % and Y/(In+Zr+Y) is 0.005 to 0.5 at % in an atomic ratio when indium, zirconium, and yttrium are designated by In, Zr, and Y, respectively. Moreover, the present invention provides a sputtering target including the complex oxide sintered body 10 and a transparent conductive oxide film obtained by sputtering the sputtering target. |
| 申请公布号 |
US2014332735(A1) |
申请公布日期 |
2014.11.13 |
| 申请号 |
US201214361455 |
申请日期 |
2012.11.29 |
| 申请人 |
TOSOH CORPORATION |
发明人 |
Kuramochi Hideto;Tamano Kimiaki;Ilgusa Hitoshi;Akiike Ryo;Shibutami Tetsuo |
| 分类号 |
H01B1/08;C23C14/34;C23C14/08;H01J37/34 |
主分类号 |
H01B1/08 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A complex oxide sintered body, wherein Zr/(In+Zr+Y) is 0.05 to 4.5 at % and Y/(In+Zr+Y) is 0.005 to 0.5 at % in an atomic ratio when indium, zirconium, and yttrium are designated by In, Zr, and Y, respectively. |
| 地址 |
Yamaguchi JP |
