发明名称 |
PLASMA ETCHING METHOD |
摘要 |
An isotropic etching process can be performed with high uniformity. A plasma etching method of etching an etching target layer containing silicon includes preparing a processing target object having the etching target layer in a processing chamber; removing an oxide film on a surface of the etching target layer by generating plasma of a first processing gas that contains a fluorocarbon gas or a fluorohydrocarbon gas but does not contain oxygen; removing a carbon-based reaction product generated when the removing of the oxide film by generating plasma of a second processing gas that does not contain oxygen; and etching the etching target layer without applying a high frequency bias power to a lower electrode serving as a mounting table configured to mount the processing target object thereon by generating plasma of a third processing gas containing a fluorocarbon gas or a fluorohydrocarbon gas with a microwave. |
申请公布号 |
US2014332372(A1) |
申请公布日期 |
2014.11.13 |
申请号 |
US201414271628 |
申请日期 |
2014.05.07 |
申请人 |
Tokyo Electron Limited |
发明人 |
Kamada Tomiko;Kitamura Akinori;Ohtake Hiroto;Osada Yutaka;Otsuka Yuji;Kohno Masayuki;Takino Yusuke;Suzuki Eiji |
分类号 |
C23F4/02 |
主分类号 |
C23F4/02 |
代理机构 |
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代理人 |
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主权项 |
1. A plasma etching method of etching an etching target layer containing silicon, the plasma etching method comprising:
preparing a processing target object having the etching target layer in a processing chamber; removing an oxide film on a surface of the etching target layer by generating plasma of a first processing gas that contains a fluorocarbon gas or a fluorohydrocarbon gas but does not contain oxygen; removing a carbon-based reaction product generated when the removing of the oxide film by generating plasma of a second processing gas that does not contain oxygen; and etching the etching target layer without applying a high frequency bias power to a lower electrode serving as a mounting table configured to mount the processing target object thereon by generating plasma of a third processing gas containing a fluorocarbon gas or a fluorohydrocarbon gas with a microwave. |
地址 |
Tokyo JP |