SEMICONDUCTOR DEVICE

摘要

There is provided a semiconductor device having: a latch circuit having a plurality of data holding nodes; a first capacitance element connected to the first data holding node included in the plurality of data holding nodes; and a first switch element provided between the first data holding node and the first capacitance element.

主权项

1. A semiconductor device comprising:
a first inverter; first and second p-channel MOS field-effect transistors coupled in series between a power supply voltage node and an input terminal of the first inverter; first and second n-channel MOS field-effect transistors coupled in series between the input terminal of the first inverter and a reference potential node; and a first capacitance element coupled to an interconnection node of the first and second p-channel MOS filed effect transistors or an interconnection node of the first and second re-channel MOS field-effect transistors, wherein gates of the first p-channel MOS field-effect transistor and the second n-channel MOS field-effect transistor are coupled to an output terminal of the first inverter, and wherein gates of the second p-channel MOS field-effect transistor and the first n-channel MOS field effect transistor are coupled to nodes of clock signals which are inverted to each other.