TRENCH JUNCTION BARRIER CONTROLLED SCHOTTKY

摘要

A method for manufacturing a Schottky diode comprising steps of 1) providing a region with a dopant of a second conductivity type opposite to a first conductivity type to form a top doped region in a semiconductor substrate of said first conductivity type; 2) providing a trench through the top doped region to a predetermined depth and providing a dopant of the second conductivity type to form a bottom dopant region of the second conductivity type; and 3) lining a Schottky barrier metal layer on a sidewall of the trench at least extending from a bottom of the top doped region to a top of the bottom doped region.

主权项

1. A metal oxide semiconductor field effect transistor (MOSFET) device comprising a plurality of transistor cells wherein each cell having a gate surrounded by body regions encompassing a source region for controlling and conducting a current between the source region near a top surface of a semiconductor substrate and a drain region disposed on a bottom surface of the semiconductor substrate wherein the MOSFET further comprising:
a trench disposed between the gates of two adjacent transistor cells wherein the trench is filled with a conductive material extending below the body region of the MOSFET and a trench bottom dopant region having a same conductivity type as the body region surrounded a bottom surface of the trench.