| 摘要 |
<p>An objective of the present invention is to prevent a speed degradation when forming the layer and to suppress increase in dielectric constant, when forming a thin film containing a predetermined element, oxygen, carbon, and nitrogen at a low temperature region. A method of manufacturing a semiconductor device includes: supplying a carbon-containing gas to a substrate after supplying a nitride gas to the substrate; supplying a predetermined element-containing gas to the substrate; supplying the carbon-containing gas to the substrate; supplying an oxidizing gas to the substrate; and supplying the nitride gas to the substrate forming a thin film containing a predetermined element, oxygen, carbon, and nitrogen on a substrate by performing a cycle several times after supplying the nitride gas to the substrate, wherein a cycle, in which the processes described above are sequentially performed, is performed several times so that a thin film containing a predetermined element, oxygen, carbon, and nitrogen is formed on the substrate.</p> |
