Semiconductor device having a nanotube layer and method for forming

摘要

A method of forming a semiconductor device includes forming a first conductive layer over the substrate. A dielectric layer, having a first opening, is formed over the first conductive layer. A seed layer is deposited over the first dielectric layer and in the first opening. A layer is formed of conductive nanotubes from the seed layer over the first dielectric layer and over the first opening. A second dielectric is formed over the layer of conductive nanotubes. An opening is formed in the second dielectric layer over the first opening. Conductive material is deposited in the second opening.

主权项

1. A method of forming a semiconductor device over a substrate, comprising:
forming a first conductive layer over the substrate; forming a first dielectric layer over the first conductive layer; forming a first opening in the first dielectric layer; depositing a seed layer over the first dielectric layer and in the first opening; forming a layer of conductive nanotubes from the seed layer over the first dielectric layer and over the first opening; forming a second dielectric over the layer of conductive nanotubes; forming a second opening in the second dielectric layer over the first opening; and depositing conductive material in the second opening, wherein a first portion of the conductive nanotubes extends from the first dielectric layer to the second dielectric layer and a second portion of the conductive nanotubes extends from the first conductive layer to the conductive material.