| 摘要 |
<p>Provided are a selection transistor and a method of fabricating the same. A selection transistor can be formed on an active region in a semiconductor substrate to include a gate electrode that includes recessed portions of a sidewall of the gate electrode which are recessed inward adjacent lower portions of the gate electrode to define a T-shaped cross section of the gate electrode. A tunnel insulating layer can be located between the gate electrode and the active region.</p> |
