发明名称 RAMAN SCATTERING PHOTOENHANCEMENT DEVICE, METHOD FOR MANUFACTURING RAMAN SCATTERING PHOTOENHANCEMENT DEVICE, AND RAMAN LASER LIGHT SOURCE USING RAMAN SCATTERING PHOTOENHANCEMENT DEVICE
摘要 <p>A Raman scattered light enhancement device including a waveguide provided in a photonic crystal (20) made of a semiconductor substrate in which holes (20a) are formed. The waveguide has resonant modes with respect to incident light at a plurality of frequencies. A difference in frequency between one resonant mode and another resonant mode is equal to a Raman shift frequency of the semiconductor substrate. A waveguide forming direction with respect to a crystal plane orientation of the semiconductor substrate is set so as to maximize a Raman transition probability which is represented by electromagnetic field distribution of the two resonant modes and a Raman tensor of the semiconductor substrate.</p>
申请公布号 KR101458484(B1) 申请公布日期 2014.11.07
申请号 KR20147019379 申请日期 2013.03.08
申请人 发明人
分类号 G02F1/35;G02F1/365 主分类号 G02F1/35
代理机构 代理人
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