| 发明名称 |
FIN FIELD EFFECT TRANSISTOR |
| 摘要 |
A fin field effect transistor including a first insulation region and a second insulation region over a top surface of a substrate. The first insulation region includes tapered top surfaces, and the second insulation region includes tapered top surfaces. The fin field effect transistor further includes a fin extending above the top surface between the first insulation region and the second insulation region. The fin includes a first portion having a top surface below the tapered top surfaces of the first insulation region. The fin includes a second portion having a top surface above the tapered top surfaces of the first insulation region. |
| 申请公布号 |
US2014327091(A1) |
申请公布日期 |
2014.11.06 |
| 申请号 |
US201414337494 |
申请日期 |
2014.07.22 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LIN Hung-Ta;FU Chu-Yun;HUANG Shin-Yeh;YANG Shu-Tine;CHEN Hung-Ming |
| 分类号 |
H01L29/78;H01L29/66 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A fin field effect transistor comprising:
a first insulation region and a second insulation region over a top surface of a substrate, the first insulation region comprising tapered top surfaces, and the second insulation region comprising tapered top surfaces; and a fin extending above the top surface between the first insulation region and the second insulation region, wherein the fin comprises a first portion having a top surface below the tapered top surfaces of the first insulation region and the second insulation region, wherein the fin comprises a second portion having a top surface above the tapered top surfaces of the first insulation region and the second insulation region. |
| 地址 |
Hsinchu TW |
