METAL-ORGANIC VAPOR PHASE EPITAXY SYSTEM AND PROCESS

摘要

A VPE reactor is improved by providing temperature control to within 0.5° C., and greater process gas uniformity via novel reactor shaping, unique wafer motion structures, improvements in thermal control systems, improvements in gas flow structures, improved methods for application of gas and temperature, and improved control systems for detecting and reducing process variation.

主权项

1. A vapor phase epitaxy reactor comprising:
a. a chamber having walls; b. a wafer carrier within the chamber; and c. a plurality of gas flow injectors located at a plurality of injection sites respectively configured to produce a process gas flow for the epitaxy process; and d. a combining gas flow system to adapt the profile of gas flow across a surface of a wafer within the chamber.