METHOD OF MAKING A RESISTIVE RANDOM ACCESS MEMORY DEVICE WITH METAL-DOPED RESISTIVE SWITCHING LAYER

摘要

Disclosed is a method for forming a resistive random access memory (RRAM) device. The present invention comprises: a step of forming a first electrode; a step of forming a resistive switching oxide layer including a metal oxide using a thermal atomic layer deposition (ALD); a step of doping the resistive switching oxide layer with metal dopant different from metal for forming a metal oxide; and a step of forming a second electrode using the thermal ALD, wherein the resistive switching oxide layer is inserted between the first and second electrodes. According to embodiments, the step of forming the resistive switching oxide can be performed without the exposure of the surface of the switching oxide layer to the surface modification plasma treatment after the deposition of the metal oxide.