PLANAR TRANSISTORS WITH NANOWIRES COINTEGRATED ON A SOI UTBOX SUBSTRATE

摘要

Fabrication of a microelectronic device on a semiconductor on insulator type substrate, the device being provided with a transistor of a given type, the channel structure of which is formed from semiconducting bar(s), a dielectric area different from the insulating layer of the substrate being provided to replace the insulating layer, facing the transistor channel structure, specifically for this given type of transistor.

主权项

1. A method for making a microelectronic device including steps as consisting of:
a) making one or several semiconducting bars, designed to form at least one transistor channel or several transistor channels of a first type in a first region of a thin semiconducting layer of a substrate facing an opening in a first mask, said substrate being a semiconductor on insulator type substrate comprising a support layer on which an insulating layer is supported, said thin semiconducting layer being supported on said insulating layer, b) removing an area from the insulating layer in extension of said opening in said first mask so as to expose said semiconducting bars. c) replacing said area removed from said insulating layer by a given dielectric material with a composition and a thickness selected to facilitate capacitive coupling between said support layer and said conducting bar(s).