SEMICONDUCTOR DEVICE HAVING CONTACT PLUG AND METHOD OF MANUFACTURING THE SAME

摘要

A semiconductor device having a contact plug is manufactured. The semiconductor device includes a substrate having a cell array region and a peripheral circuit region, a gate electrode on the substrate, and an interlayer dielectric layer on the substrate. The interlayer dielectric layer has an upper surface having a first height.;The device further comprises a contact hole extending through the interlayer dielectric layer and a contact plug having an upper surface and electrically connecting to the substrate in the contact hole. The upper surface of the contact plug has a second height lower than the first height. A spacer is on the sidewall of the contact hole. A first conductive line is on the spacer and the upper surface of the contact plug.

主权项

1. A semiconductor device, comprising:
a substrate having a cell array region and a peripheral circuit region; a gate electrode on the substrate; an interlayer dielectric layer adjacent to the gate electrode on the substrate, the interlayer dielectric layer having an upper surface having a first height; a contact hole extending through the interlayer dielectric layer to expose a portion of the substrate; a contact plug having an upper surface and electrically communicating with the substrate in the contact hole, the upper surface of the contact plug having a center portion, edge portion, and a second height lower than the first height; a spacer on the sidewall of the contact hole, the spacer directly abutting the edge portion of the upper surface of the contact plug; and a first conductive line on the spacer and the center portion of the upper surface of the contact plug, the first conductive line electrically communicating with the contact plug.