METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

According to one embodiment, a semiconductor light emitting device includes a semiconductor layer including a first surface, a second surface opposite to the first surface, and a light emitting layer; a p-side electrode provided on the second surface of the semiconductor layer in a region including the light emitting layer; an n-side electrode provided on the second surface of the semiconductor layer in a region not including the light emitting layer; an insulating film being more flexible than the semiconductor layer, the insulating film provided on the second surface and a side surface of the semiconductor layer, and the insulating film having a first opening reaching the p-side electrode and a second opening reaching the n-side electrode; a p-side interconnection layer provided on the insulating film and connected to the p-side electrode; and an n-side interconnection layer provided on the insulating film and connected to the n-side electrode.

主权项

1. A method for manufacturing a semiconductor light emitting device, comprising:
forming a semiconductor layer including a light emitting layer on a substrate; forming a separation groove in the semiconductor layer; forming an electrode on the semiconductor layer; forming an first insulating film so as to form on the semiconductor layer and a bottom surface of the separation groove; forming a contact portion and an interconnection portion, removing the substrate from the semiconductor layer after forming the interconnection portion; and singulating the semiconductor light emitting device by cutting the first insulating film at the separation grove after removing the substrate from the semiconductor layer.