Half metal trilayer TMR reader with negative interlayer coupling

摘要

In an embodiment of the invention, a trilayer magnetoresistive sensor comprises an underlayer on which a first free layer is deposited. A barrier layer is then deposited after which a second free layer is deposited. A capping layer is then deposited above second free layer. The first free layer is a layer which includes at least a layer of a nitride of an element including at least one of Fe, Co, or Ni, or a multiple laminate structure of a layer containing a nitride of an element including at least one of Fe, Co, Ni and another ferromagnetic layer containing at least one of Fe, Co, or Ni. The combination of the first and second free layers causes anti-parallel coupling.

主权项

1. A method for manufacturing a trilayer sensor, comprising:
depositing an underlayer; depositing a first free layer on the underlayer, wherein the first free layer comprises a nitride of an element including at least one of Fe, Co, or Ni; depositing a barrier layer on the first free layer, wherein the barrier layer is comprised of an insulating material; depositing a second free layer on the barrier layer, wherein the second free layer comprises an alloy ferromagnetic layer that does not include a nitride, wherein composition of the first free layer and second free layer results in anti-parallel coupling interaction between the first free layer and the second free layer; and depositing a cap layer on the second free layer.