Film of n type (100) oriented single crystal diamond semiconductor doped with phosphorous atoms, and a method of producing the same

摘要

There is provided an n type (100) oriented single crystal diamond semiconductor film into which phosphorous atoms have been doped and a method of producing the same. The n type (100) oriented single crystal diamond semiconductor film, characterized in that (100) oriented diamond is epitaxially grown on a substrate under such conditions that; the diamond substrate is (100) oriented diamond, a means for chemical vapor deposition provides hydrogen, hydrocarbon and a phosphorous compound in the plasma vapor phase, the ratio of phosphorous atoms to carbon atoms in the plasma vapor phase is no less than 0.1%, and the ratio of carbon atoms to hydrogen atoms is no less than 0.05%, and the method of producing the same.

主权项

1. A method of producing an n-type single crystal diamond semiconductor film with (100) orientation, comprising the steps of:
providing a unit of forming a plasma vapor phase to carry out chemical vapor deposition; installing a substrate in the unit, the substrate made of a diamond with (100) orientation having an off-angle of 0.5 degrees to 10 degrees in any direction from the (100) plane; providing hydrogen, hydrocarbon, and a phosphorous compound into the plasma vapor phase of the unit, in the condition of:
the ratio of phosphorous atoms to carbon atoms in the plasma vapor phase being 5% or more and 63% or less, andthe ratio of carbon atoms to hydrogen atoms being no less than 0.1%; and epitaxially growing a single crystal thin film on the diamond substrate, the crystal having (100) orientation made of an n-type diamond semiconductor doped with phosphorous.