| 摘要 |
<p>The present invention relates to a nitride schottky barrier diode with a low threshold voltage which includes a substrate, a transition layer which is formed on the substrate, a GaN buffer layer which is formed on the transition layer, an AlGaN barrier layer which is formed on the GaN buffer layer, an anode and a cathode which are separately arranged, and a surface passivation layer which covers the remaining part except the upper sides of the cathode and the anode. The cathode is an ohmic electrode which is in ohmic contact with the AlGaN barrier layer. The anode is formed by contact between a schottky electrode part which is inserted into a recess formed by cutting a part of the AlGaN barrier layer and an ohmic electrode part which is in ohmic contact with the AlGaN barrier layer. The present invention maintains high performance even though a high voltage is applied due to a current flow between the ohmic electrode of the cathode and the omhic electrode part of the anode while the schottky electrode part inserted into the recess reduces the threshold voltage by including the anode formed by combining the schottky electrode part inserted into the recess formed by etching a part of the AlGaN barrier layer and the ohmic electrode part in ohmic contact with the AlGaN barrier layer. Particularly, a current value in a forward voltage of 1.5V is two or three times larger than the current value of a general schottky barrier diode.</p> |
